elektronische bauelemente sik04n65sl 4a , 650v , r ds(on) 2.7 n-ch enhancement mode power mosfet 30-dec -2013 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 262 rohs compliant product a suffix of -c specifies halogen free description the sik04n65sl is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline 100% eas guaranteed green device available absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v t c =25c 4 a continuous drain current t c =100c i d 2.8 a pulsed drain current i dm 16 a t c =25c 95 total power dissipation derate above 25c p d 0.76 w single pulse avalanche energy 1 e as 202 mj operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient r ja 62.5 c / w maximum thermal resistance junction-case r jc 1.32 c / w notes: 1. l=30mh,i as =3.36a, v dd =150v, r g =25 , starting t j =25c 1 gate 3 source 2 drain millimeter millimeter ref. min. max. ref. min. max. a 9.80 10.40 g 4.40 4.85 b 9.60 10.50 h 2.54 bsc c 1.19 1.40 i 2.70 bsc d 12.3 14.3 j 4.00 bsc e 1.10 1.50 k 0.25 0.56 f 0.68 1.00 l 1.10 1.45
elektronische bauelemente sik04n65sl 4a , 650v , r ds(on) 2.7 n-ch enhancement mode power mosfet 30-dec -2013 rev. a page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 650 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 30v drain-source leakage current i dss - - 1 a v ds =650v, v gs =0 static drain-source on-resistance r ds(on) - 2.3 2.7 v gs =10v, i d =2a total gate charge 1.2 q g - 8.03 - gate-source charge 1.2 q gs - 2.57 - gate-drain change 1.2 q gd - 3.03 - nc i d =4a v ds =520v v gs =10v turn-on delay time 1.2 t d(on) - 16.6 - rise time 1.2 t r - 37.33 - turn-off delay time 1.2 t d(off) - 18 - fall time 1.2 t f - 19.2 - ns v dd =325v i d =4a r g =25 input capacitance c iss - 464 - output capacitance c oss - 54 - reverse transfer capacitance c rss - 1.32 - pf v gs =0 v ds =25v f =1.0mhz source-drain diode diode forward voltage v sd - - 1.4 v i s =4a, v gs =0 continuous source current i s - - 4 a pulsed source current i sm - - 16 a integral reverse p-n junction diode in the mosfet reverse recovery time t rr - 455.23 - ns reverse recovery charge q rr - 2.01 - c i s =4a,v gs =0, dl f /dt=100a/ s notes: 1. pulse test: pulse width Q 300 s, duty cycle Q 2% 2. essentially independent of operating temperatur e.
elektronische bauelemente sik04n65sl 4a , 650v , r ds(on) 2.7 n-ch enhancement mode power mosfet 30-dec -2013 rev. a page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente sik04n65sl 4a , 650v , r ds(on) 2.7 n-ch enhancement mode power mosfet 30-dec -2013 rev. a page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente sik04n65sl 4a , 650v , r ds(on) 2.7 n-ch enhancement mode power mosfet 30-dec -2013 rev. a page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical test curves
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